FDB2570 - N-Channel MOSFET

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.

Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.

• 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V.
• Low gate charge (40nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current.
• Continuous.
• Pulsed TA=25oC u.