FDB2570 Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.
FDB2570 Key Features
- 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
- Low gate charge (40nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating