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FDB2570 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench.

General Description

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.

Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.

These MOSFETs

Key Features

  • 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V.
  • Low gate charge (40nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed TA=25oC u.

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