FDB3672 Description
FDB3672 July 2004 FDB3672 N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ.
FDB3672 Key Features
- rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A
- Qg(tot) = 24nC (Typ.), VGS = 10V
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101