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FDB3672 - N-Channel MOSFET

Key Features

  • rDS(ON) = 24mΩ (Typ. ), VGS = 10V, ID = 44A.
  • Qg(tot) = 24nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • Optimized efficiency at high frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82760 GATE DRAIN (FLANGE).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB3672 July 2004 FDB3672 N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.