Fairchild Semiconductor FDB3682
N-Channel MOSFET
FEATURES
● r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A● Qg(tot) = 18.5nC (Typ.), VGS = 10V
● Low Miller Charge
● Low QRR Body Diode
● UIS Capability (Single Pulse and Repetitive Pulse)
● Qualified to AEC Q101 Formerly developmental type 82755
APPLICATIONS
● DC/DC converters and Off-Line UPS● Distributed Power Architectures and VRMs
● Primary Switch for 24V and 48V Systems
● High Voltage Synchronous Rectifier
● Direct Injection / Diesel Injection System
● 42V Automotive Load Control
● Electronic Valve Train System SOURCE DRAIN GATE DRAIN (FLANGE) GATE D SOURCE G DRAIN (FLANGE) TO-263AB FDB SERIES TO-220AB FDP SERIES S MOSFET
MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operati...