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FDB3682 - N-Channel MOSFET

Key Features

  • r DS(ON) = 32mΩ (Typ. ), VGS = 10V, ID = 32A.
  • Qg(tot) = 18.5nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82755.

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FDB3682 / FDP3682 September 2002 FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ Features • r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.