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FDB42AN15A0_F085 - N-Channel MOSFET

Key Features

  • Typ rDS(on) = 30mΩ at VGS = 10V, ID = 12A.
  • Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB42AN15A0_F085 N-Channel Power Trench® MOSFET FDB42AN15A0_F085 N-Channel Power Trench® MOSFET 150V, 35A, 42mΩ Features „ Typ rDS(on) = 30mΩ at VGS = 10V, ID = 12A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems D GS TO-263 FDB SERIES G June 2013 D S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperatu