FDB6021P Description
This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications.
FDB6021P Key Features
- 28 A, -20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V RDS(ON) = 65 mΩ @ VGS = 1.8 V
- Critical DC electrical parameters specified at elevated temperature
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating