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FDB8443 - N-Channel PowerTrench MOSFET

Key Features

  • RDS(on) = 2.3 mΩ ( Typ. )@ VGS = 10 V, ID = 80 A.
  • QG(tot) = 142 nC ( Typ. ).
  • Low Miller Charge, QGD = 32 nC( Typ. ).
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FDB8443 N-Channel PowerTrench® MOSFET March 2013 FDB8443 N-Channel PowerTrench® MOSFET tm 40 V, 182 A, 3.0 mΩ Features „ RDS(on) = 2.3 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A „ QG(tot) = 142 nC ( Typ.) „ Low Miller Charge, QGD = 32 nC( Typ.