FDB8870 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB8870 May 2008 FDB8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.

Datasheet Details

Part number	FDB8870
Manufacturer	Fairchild (now onsemi)
File Size	437.28 KB
Description	N-Channel MOSFET
Datasheet	FDB8870_FairchildSemiconductor.pdf

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Applications • DC/DC converters GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) tm

Key Features

rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A.
rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A.
High performance trench technology for extremely low rDS(ON).
Low gate charge.
High power and current handling capability D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Contin.

FDB8870 Distributor

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