FDB8870 Datasheet | Fairchild Semiconductor

May 2008 N-Channel Power Trench® MOSFET 30V, 160A, 3.9mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications - DC/DC converters GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) tm Features - r DS(ON) = 3.9mΩ, VGS = 10V, ID = 35A - r DS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A - High performance trench technology for extremely low r DS(ON) - Low gate charge - High power and current handling capability MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Note 1) Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 43o C/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 160 150 23 Figure 4 300 160 1.07 -55 to 175 Units V V A A A A m J W W/o C o C Thermal Characteristics...