FDB8870 Overview
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Key Features
- rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
- Continuous (TC = 25oC, VGS = 4.5V) (Note
- Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note
