FDB8880 Datasheet | Fairchild Semiconductor

Features r DS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A r DS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. r DS(ON) Low gate charge High power and current handling capability Application - DC / DC Converters Ro HS plicant GATE DRAIN (FLANGE) SOURCE TO-263AB FDB SERIES (FLANGE) DRAIN TO-220AB FDP SERIES SOURCE DRAIN GATE ©2008 Fairchild Semiconductor Corporation FDP8880 / FDB8880 Rev. A1 .fairchildsemi FDP8880 / FDB8880 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) Continuous (TC = 25o C, VGS = 4.5V) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 43o C/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25o C TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 54 48 11 Figure 4 31 55 0.37 -55 to 175 Units V V A A A A m J W W/o C o C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-262 ( Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 2.73 62 43 o C/W o C/W o...