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FDB9406_F085 - N-Channel MOSFET

Features

  • Typ RDS(on) = 1.31mΩ at VGS = 10V, ID = 80A.
  • Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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FDB9406_F085 N-Channel PowerTrench® MOSFET June 2014 FDB9406_F085 N-Channel PowerTrench® MOSFET 40 V, 110 A, 1.8 mΩ Features „ Typ RDS(on) = 1.31mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications DD GS TO-263 FDB SERIES G S „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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