FDB9406_F085
FDB9406_F085 is N-Channel MOSFET manufactured by Fairchild Semiconductor.
FDB9406_F085 N-Channel Power Trench® MOSFET
June 2014
N-Channel Power Trench® MOSFET
40 V, 110 A, 1.8 mΩ
Features
- Typ RDS(on) = 1.31mΩ at VGS = 10V, ID = 80A
- Typ Qg(tot) = 107n C at VGS = 10V, ID = 80A
- UIS Capability
- Ro HS pliant
- Qualified to AEC Q101
Applications
TO-263 FDB SERIES
- Automotive Engine Control
- Powertrain Management
- Solenoid and Motor Drivers
- Electronic Steering
- Integrated Starter/Alternator
- Distributed Power Architectures and VRM
- Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild website at .fairchildsemi./packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
Power Dissipation Derate above 25o...
