FDBL0110N60
FDBL0110N60 is MOSFET manufactured by Fairchild Semiconductor.
FDBL0110N60 N-Channel Power Trench® MOSFET
N-Channel Power Trench® MOSFET
60 V, 300 A, 1.1 mΩ
January 2016
Features
- Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 170 n C at VGS = 10V, ID = 80 A
- UIS Capability
- Ro HS pliant
Applications
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated tools
- Battery Protection
- Solar Inverters
- UPS and Energy Inverters
- Energy Storage
- Load Switch
S For current package drawing, please refer to the Fairchild website at https://.fairchildsemi./evaluate/package-specifications/package Details.html?id=PN_PSOFA-008
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
- Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
Power Dissipation Derate Above 25o...
