FDC3512
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 3.0 A, 80 V RDS(ON) = 77 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6 V
Applications
- DC/DC converter
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (13n C typ)
- High power and current handling capability
- Fast switching speed
1 2
6 5 4
Super SOT TM -6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Maximum Power Dissipation
TA=25o C unless otherwise noted
Parameter
Ratings
80 ± 20
(Note 1a)
Units
V V A W °C
3.0 20 1.6 0.8
- 55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance,...
