FDC3616N Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDC3616N Key Features
- 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (23nC typical)
- High power and current handling capability
- Fast switching speed