FDC3616N
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (23n C typical)
- High power and current handling capability
- Fast switching speed.
Applications
- DC/DC converter
- Load Switching
Bottom Drain
G S S S Super SOT-6
6 5 4
2 3
S FLMP
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Maximum Power Dissipation
TA=25o C unless otherwise noted
Parameter
Ratings
100 ± 20
(Note 1a)
Units
V V A W °C
3.7 20 2 1.1
- 55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics...
