Description
These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V RDS(on) = 0.12Ω @ VGS = 2.5V P-Channel -1.6A, -20V. RDS(on) = 0.17Ω @ VGS = -4.5V RDS(on)= 0.25Ω @ VGS = -2.5V Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
FDC6327C Datasheet
