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FDC6327C - Dual N & P-Channel 2.5V MOSFET

General Description

These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V RDS(on) = 0.12Ω @ VGS = 2.5V P-Channel -1.6A, -20V. RDS(on) = 0.17Ω @ VGS = -4.5V RDS(on)= 0.25Ω @ VGS = -2.5V Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC6327C July 2000 FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • • • • • • N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V RDS(on) = 0.12Ω @ VGS = 2.5V P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V RDS(on)= 0.25Ω @ VGS = -2.5V Fast switching speed. Low gate charge.