FDC6420C Overview
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
FDC6420C Key Features
- Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
- Q2 -2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = -4.5 V RDS(ON) = 190 mΩ @ VGS = -2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- SuperSOT -6 package: small footprint (72% smaller than SO-8); low profile (1mm thick)
