Datasheet Summary
September 2001
20V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
- Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
- Q2
- 2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS =
- 4.5 V RDS(ON) = 190 mΩ @ VGS =
- 2.5 V
- Low gate charge
- High...
