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FDC6420C - 20V N & P-Channel PowerTrench MOSFETs

General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V.
  • Q2.
  • 2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 190 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT.
  • 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC6420C September 2001 FDC6420C 20V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Q2 –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON).