FDC6420C - 20V N & P-Channel PowerTrench MOSFETs

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6420C
Manufacturer	Fairchild Semiconductor
File Size	102.58 KB
Description	20V N & P-Channel PowerTrench MOSFETs
Datasheet	FDC6420C Datasheet
Additional preview pages of the FDC6420C datasheet.

Product details

Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V.
Q2.
2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS =.
4.5 V RDS(ON) = 190 mΩ @ VGS =.
2.5 V.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
SuperSOT.
6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

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Published: Mar 30, 2005 |