Datasheet4U Logo Datasheet4U.com

FDC6420C Datasheet 20v N & P-channel Powertrench MOSFETs

Manufacturer: Fairchild (now onsemi)

Overview: FDC6420C September 2001 FDC6420C 20V N & P-Channel PowerTrench®.

General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Key Features

  • Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V.
  • Q2.
  • 2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 190 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT.
  • 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDC6420C Dual-Channel MOSFET ON Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDC642P P-Channel MOSFET
FDC642P_F085 P-Channel PowerTrench MOSFET
FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC640P P-Channel MOSFET
FDC6432SH 12V P-Channel PowerTrench MOSFET
FDC645N N-Channel MOSFET
FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6020C Complementary PowerTrench MOSFET
FDC602P P-Channel MOSFET
FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET

FDC6420C Distributor