FDC642P_F085
Overview
- Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A
- Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A
- Fast switching speed
- Low gate charge(6.9nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick).
- RoHS Compliant
- Qualified to AEC Q101