FDC642P_F085 Datasheet PDF - Fairchild Semiconductor P-Channel PowerTrench MOSFET Specs

FDC642P_F085 - P-Channel PowerTrench MOSFET

Datasheet Summary

Features

Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A.
Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A.
Fast switching speed.
Low gate charge(6.9nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick).
RoHS Compliant.
Qualified to AEC Q101.

Datasheet Details

Part number	FDC642P_F085
Manufacturer	Fairchild Semiconductor
File Size	217.19 KB
Description	P-Channel PowerTrench MOSFET
Datasheet	FDC642P_F085 Datasheet
Additional preview pages of the FDC642P_F085 datasheet.

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FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick). RoHS Compliant Qualified to AEC Q101 Applications Load switch Battery protection Power management June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A 1 www.fairchildsemi.

Published: Jun 17, 2015 |