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FDC642P_F085 - P-Channel PowerTrench MOSFET

Key Features

  • Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A.
  • Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A.
  • Fast switching speed.
  • Low gate charge(6.9nC typical).
  • High performance trench technology for extremely low rDS(on).
  • SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick).
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features „ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A „ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A „ Fast switching speed „ Low gate charge(6.9nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick). „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Load switch „ Battery protection „ Power management June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A 1 www.fairchildsemi.