Datasheet Summary
FDC642P_F085 P-Channel PowerTrench® MOSFET
P-Channel PowerTrench® MOSFET
-20V, -4A, 100mΩ
Features
- Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A
- Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A
- Fast switching speed
- Low gate charge(6.9nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick).
- RoHS pliant
- Qualified to AEC Q101
Applications
- Load switch
- Battery protection
- Power management
June 2009
SuperSOT TM-6
S4 D5 D6
3G 2D 1D
©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A
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FDC642P_F085...
