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FDC6561AN - Dual N-Channel MOSFET

Key Features

  • 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well.

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April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.