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FDC697P - P-Channel 1.8V PowerTrench MOSFET

Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process.

It has been optimized for battery power management applications.

Features

  • 8 A,.
  • 20 V RDS(ON) = 20 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 25 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 35 mΩ @ VGS =.
  • 1.8 V.

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Full PDF Text Transcription

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FDC697P January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Features • –8 A, –20 V RDS(ON) = 20 mΩ @ VGS = –4.5 V RDS(ON) = 25 mΩ @ VGS = –2.5 V RDS(ON) = 35 mΩ @ VGS = –1.
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