Fairchild Semiconductor FDC697P
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.| Part No. | FDC697P |
|---|---|
| Datasheet | FDC697P Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | P-Channel 1.8V PowerTrench MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● –8 A, –20 V RDS(ON) = 20 mΩ @ VGS = –4.5 V RDS(ON) = 25 mΩ @ VGS = –2.5 V RDS(ON) = 35 mΩ @ VGS = –1.8 VAPPLICATIONS
●●
● Battery management Load Switch Battery protection
● High performance trench technology for extremely low RDS(ON)
● Fast switching speed
● FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size G S S S SuperSOT-6 TM 1 S 6 5 Bottom Drain 2 3 4 S FLMP
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –8 –40 2 1.5 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) 60 111 0.5 °C/W Package Marking and Ordering Information Device Marking .697 Device FDC697P Reel Size 7...
