Datasheet Summary
FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Features
- rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A
- Qg(tot) = 28nC (Typ.), VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
- RoHS pliant
Formerly developmental type 82560
Dec 2012
Applications
- Motor / Body Load Control
- ABS Systems
- Powertrain Management
- Injection Systems
- DC-DC converters and Off-line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
GATE SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless...
