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FDD10N20LZ - MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 300 mΩ (Typ. ) @ VGS = 10 V, ID = 3.8 A.
  • Low Gate Charge (Typ. 12 nC).
  • Low Crss (Typ. 11 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD10N20LZ — N-Channel UniFETTM MOSFET FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 mΩ Features • RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.