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FDD120AN15A0 - N-Channel PowerTrench MOSFET

Key Features

  • rDS(ON) = 101mΩ (Typ. ), VGS = 10V, ID = 4A.
  • Qg(tot) = 11.2nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82845.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP120AN15A0 / FDD120AN15A0 September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ Features • rDS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A • Qg(tot) = 11.2nC (Typ.