FDD18N20LZ Datasheet | Fairchild Semiconductor

- N-Channel Uni FETTM MOSFET December 2013 Features N-Channel Uni FETTM MOSFET 200 V, 16 A, 125 mΩ Description Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. - R DS(on) = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A - Low Gate Charge (Typ. 30 n C) - Low CRSS (Typ. 25 p F) - 100% Avalanche Tested - Improved dv/dt Capability - ESD Improved Capability - Ro HS pliant Applications - LED TV - Consumer Appliances - Uninterruptible Power Supply D D G S G D-PAK MOSFET Maximum Ratings TC = 25o C unless otherwise noted. VGSS ID IDM IAR EAS Symbol VDSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Continuous (TC = 100o C) - Pulsed - Continuous (TC = 25o C) FDD18N20LZ 200 ±20 16 9.6 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 64 320 16 8.9 10 89 0.7 -55 to +150 300 Unit V V A A m J A m J V/ns W/o C o o EAR PD dv/dt - Derate above 25o C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient,...