Datasheet Details
| Part number | FDD3690 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 84.01 KB |
| Description | 100V N-Channel PowerTrench MOSFET |
| Datasheet |
 FDD3690 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
Key Features
- 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V.
- Low gate charge (28nC typical).
- Fast Switching.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability D D G S G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C Pulsed Power Dissipation.