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FDD3690 Datasheet 100v N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDD3690 April 2001 FDD3690 100V N-Channel PowerTrench MOSFET General.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V.
  • Low gate charge (28nC typical).
  • Fast Switching.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D D G S G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C Pulsed Power Dissipation.

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