Datasheet Summary
FDD4243_F085 P-Channel PowerTrench® MOSFET
P-Channel PowerTrench® MOSFET
-40V, -14A, 64mΩ
Features
- Typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A
- Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A
- Typ Qg(TOT) = 21nC at VGS = -10V
- High performance trench technology for extremely low rDS(on)
- RoHS pliant
- Qualified to AEC Q101
Applications
- Inverter
- Power Supplies
December 2010
©2010 Fairchild Semiconductor Corporation FDD4243_F085 Rev. C
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FDD4243_F085 P-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
Drain to Source Voltage
Gate to Source Voltage Drain Current...
