Datasheet4U Logo Datasheet4U.com

FDD5670 - 60V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • 48 A, 60 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.018 Ω @ VGS = 6 V.
  • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD Drain-Source Voltage TC=25oC unless otherwise noted Parameter Ratings 60 ±20 Units V V A -Continuous -Pulsed (Note 1) (Note 1a) 48 10 100 70 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD5670 N-Channel Power MOSFET ON Semiconductor
FDD5612 N-Channel MOSFET ON Semiconductor
FDD5614P P-Channel MOSFET ON Semiconductor
FDD5614P P-Channel MOSFET VBsemi
FDD5680 N-Channel Power MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDD5612 60V N-Channel PowerTrench MOSFET
FDD5614P 60V P-Channel PowerTrench MOSFET
FDD5680 N-Channel/ PowerTrench MOSFET
FDD5690 60V N-Channel PowerTrench MOSFET
FDD5202P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD5670 March 1999 ADVANCE INFORMATION FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 48 A, 60 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.018 Ω @ VGS = 6 V. • • • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON).