FDD5680
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V
- Low gate charge (33nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(on)
