FDD5680 Datasheet | Fairchild Semiconductor

July 2000 N-Channel, PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features - - - 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V. Low gate charge (33nC typical). Fast switching speed. High performance trench technology for extremely low RDS(on). Applications - - DC/DC converter Motor drives -...