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FDD5N50NZF - MOSFET

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Key Features

  • RDS(on) = 1.47 Ω (Typ. ) @ VGS = 10 V, ID = 1.85 A.
  • Low Gate Charge (Typ. 9 nC).
  • Low Crss (Typ. 4 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Imoroved Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD5N50NZF — N-Channel UniFETTM FRFET® MOSFET FDD5N50NZF N-Channel UniFETTM FRFET® MOSFET 500 V, 3.7 A, 1.75 Ω November 2013 Features • RDS(on) = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A • Low Gate Charge (Typ. 9 nC) • Low Crss (Typ. 4 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.