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FDD6530A - 20V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Key Features

  • 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V.
  • Low gate charge (6.5 nC typical).
  • Fast switching.

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Full PDF Text Transcription for FDD6530A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDD6530A. For precise diagrams, and layout, please refer to the original PDF.

FDD6530A July 2001 FDD6530A 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency o...

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FET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V • Low gate charge (6.5 nC typical) • Fast switching Applications • DC/DC converter • Motor drives • High performance trench technology for extremely low RDS(ON) .

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ON Semiconductor Logo FDD6530A 20V N-Channel Power MOSFET ON Semiconductor

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