Datasheet4U Logo Datasheet4U.com

FDD6637_F085 - P-Channel PowerTrench MOSFET

Key Features

  • Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A.
  • Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A.
  • Typ Qg(10) = 45nC at VGS = -10V.
  • High performance trench technology for extremely low rDS(on).
  • Qualified to AEC Q101.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD6630A N-Channel MOSFET On Semiconductor
FDD6606 30V N-Channel PowerTrench MOSFET Advanced Analogic Technologies
FDD6685 30V P-Channel MOSFET ON Semiconductor
FDD6530A 20V N-Channel Power MOSFET ON Semiconductor
FDD6N50 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDD6637 35V P-Channel PowerTrench MOSFET
FDD6630A N-Channel PowerTrench MOSFET
FDD6632 N-Channel MOSFET
FDD6635 35V N-CHANNEL MOSFET
FDD6606 30V N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Features „ Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A „ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A „ Typ Qg(10) = 45nC at VGS = -10V „ High performance trench technology for extremely low rDS(on). „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Inverter „ Power Supplies „ „ December 2010 ©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev. C 1 www.fairchildsemi.