Datasheet Summary
FDD6637_F085 P-Channel PowerTrench® MOSFET
P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ
Features
- Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A
- Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A
- Typ Qg(10) = 45nC at VGS = -10V
- High performance trench technology for extremely low rDS(on).
- Qualified to AEC Q101
- RoHS pliant
Applications
- Inverter
- Power Supplies
- -
December 2010
©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev. C
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FDD6637_F085 P-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain to Source Voltage
VDS(Avalanche) Drain to Source Avalanche...