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FDD6696 - 30V N-Channel PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Features

  • 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V.
  • Low gate charge (17nC typical).
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON).

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Datasheet preview – FDD6696

Datasheet Details

Part number FDD6696
Manufacturer Fairchild Semiconductor
File Size 109.41 KB
Description 30V N-Channel PowerTrench MOSFET
Datasheet download datasheet FDD6696 Datasheet
Additional preview pages of the FDD6696 datasheet.

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Full PDF Text Transcription

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FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.
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