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FDH27N50 - 27A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFET

Key Features

  • Low Gate Charge Qg results in Simple Drive Requirement.
  • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness.
  • Reduced rDS(ON).
  • Reduced Miller Capacitance and Low Input Capacitance.
  • Improved Switching Speed with Low EMI.
  • 175°C Rated Junction Temperature Package JEDEC TO-247 SOURCE DRAIN GATE Symbol D DRAIN (FLANGE) G S Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDH27N50 August 2002 FDH27N50 27A, 500V, 0.