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FDH3595
Discrete POWER & Signal Technologies
FDH3595
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
125 200 500 600 1.0 4.0 -65 to +175 175
Units
V mA mA mA A A °C °C
Tstg TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C.
FDH3595 Datasheet
