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FDMA1430JP Datasheet

Manufacturer: Fairchild (now onsemi)
FDMA1430JP datasheet preview

Datasheet Details

Part number FDMA1430JP
Datasheet FDMA1430JP-FairchildSemiconductor.pdf
File Size 356.65 KB
Manufacturer Fairchild (now onsemi)
Description -30V -2.9A Integrated P-Channel MOSFET and BJT
FDMA1430JP page 2 FDMA1430JP page 3

FDMA1430JP Overview

This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications.

FDMA1430JP Key Features

  • Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
  • Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
  • Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
  • Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A
  • Low profile
  • 0.8 mm maximum
  • in the new package
  • HBM ESD protection level > 2 kV typical (Note 3)
  • RoHS pliant
Fairchild (now onsemi) logo - Manufacturer

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FDMA1430JP Distributor

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