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FDMA3028N Dual N-Channel PowerTrench® MOSFET
June 2011
FDMA3028N
Dual N-Channel PowerTrench® MOSFET
30 V, 3.8 A, 68 mΩ Features General Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Max rDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A Max rDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A Max rDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A Low profile - 0.
FDMA3028N Datasheet
