FDMA420NZ Datasheet | Fairchild Semiconductor

Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special Micro FET leadframe. Power Trench® MOSFET Features - RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A - RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A tm Applications - Li-lon Battery Pack - Low Profile-0.8mm maximum-in the new package Micro FET 2x2 mm - Ro HS pliant Pin 1 G Source S D D 4 3 .. Drain Bottom Drain Contact Micro FET Bottom View 2X2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±12 5.7 24 0.9 2.4 -55 to +150 Units V V A W o Power dissipation (Steady State) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 145 52 o C/W Package Marking and Ordering Information Device Marking 420 Device FDMA420NZ Reel Size 7” Tape Width 12mm Quantity 3000 units .fairchildsemi. ©2006 Fairchild Semiconductor Corporation FDMA420NZ Rev B1 FDMA420NZ Single N-Channel 2.5V specified Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0V , ID = 250µA ID = 250µA, Referenced to 25°C VDS = 16V, VGS = 0V, VGS = ±12V, VDS = 0V 20 12 1 ±10 V m V/°C µA µA On Characteristics (Note...