FDMA520PZ
Description
June 2014 - Max rDS(on) = 30m: at VGS = –4.5V, ID = –7.3A - Max rDS(on) = 53m: at VGS = –2.5V, ID = –5.5A - Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm - HBM ESD protection level > 3k V typical (Note 3) - Free from halogenated pounds and antimony oxides - RoHS compliant This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.
