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FDMA6023PZT - Dual P-Channel MOSFET

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.

Features

  • Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A.
  • Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A.
  • Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A.
  • Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A.
  • Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin.
  • HBM ESD protection level > 2.4 kV typical (Note 3).
  • RoHS Compliant.
  • Free from halogenated compounds and antimony oxides General.

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Datasheet preview – FDMA6023PZT

Datasheet Details

Part number FDMA6023PZT
Manufacturer Fairchild Semiconductor
File Size 449.57 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDMA6023PZT Datasheet
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Full PDF Text Transcription

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FDMA6023PZT Dual P-Channel PowerTrench® MOSFET February 2009 FDMA6023PZT www.datasheet4u.com Dual P-Channel PowerTrench® MOSFET -20 V, -3.6 A, 60 mΩ Features „ Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A „ Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A „ Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A „ Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A „ Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin „ HBM ESD protection level > 2.4 kV typical (Note 3) „ RoHS Compliant „ Free from halogenated compounds and antimony oxides General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.
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