FDMA6023PZT
Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses.
Key Features
- Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A
- Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A
- Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A
- Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A
- Low Profile-0.55 mm maximum
- in the new package MicroFET 2x2 mm Thin
- HBM ESD protection level > 2.4 kV typical (Note
- RoHS compliant
- Free from halogenated pounds and antimony oxides
