Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.
Active Clamp Switch
Load Switch
Pin 1 Drain
DD G Source
BBootttotom
Features
- Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A.
- Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A.
- Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm.
- Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg.
- This product is optimised for fast switching.
FDMA86265P Datasheet
