FDMA86265P Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.
FDMA86265P Key Features
- Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
- Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
- Low Profile
- 0.8 mm maximum in the new package MicroFET
- Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg
- This product is optimised for fast switching