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FDMA86265P P-Channel PowerTrench® MOSFET
August 2018
FDMA86265P
P-Channel PowerTrench® MOSFET
-150 V, -1 A, 1.2 Ω
Features
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg
This product is optimised for fast switching applications as well as load switch applications
100% UIL tested
RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.