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FDMA86551L - MOSFET

General Description

Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6 A Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm Free from halogenated compounds and antimony oxides RoHS Compliant This device has been desig

Key Features

  • General.

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FDMA86551L Single N-Channel PowerTrench® MOSFET October 2014 FDMA86551L Single N-Channel PowerTrench® MOSFET 60 V, 7.5 A, 23 mΩ Features General Description „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.5 A „ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6 A „ Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm „ Free from halogenated compounds and antimony oxides „ RoHS Compliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.