FDMA910PZ
Description
Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A - Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A - Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A - Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
