Fairchild Semiconductor FDMA910PZ
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.FDMA910PZ Specifications
- Mount Type : Surface Mount
- Breakdown Voltage : -20V
- Threshold Voltage : -500mV
- RDS(on) Max : 20mΩ
- Input Capacitance : 2.805nF
- Min Breakdown Voltage : 20V
- Terminals : 6
- Channels : 1
- Rise Time : 19ns
- Fall Time : 103ns
- Max Power Dissipation : 2.4W
- Power Dissipation : 900mW
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | FDMA910PZ |
|---|---|
| Datasheet | FDMA910PZ Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
GENERAL DESCRIPTION
Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm HBM ESD protection level > 2.8k V typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1 Drain DD G Source Bottom Drain Contact D1 6D D2 5D G3 DD S MicroFET 2X2 (Bottom View) MOSFETMAXIMUM RATINGS
T
