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FDMA910PZ - MOSFET

Description

Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm This device is designed specifically for batter

Features

  • General.

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Full PDF Text Transcription

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FDMA910PZ Single P-Channel PowerTrench® MOSFET FDMA910PZ Single P-Channel PowerTrench® MOSFET -20 V, -9.4 A, 20 mΩ June 2014 Features General Description „ Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A „ Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A „ Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A „ Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ HBM ESD protection level > 2.
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