FDMB2307NZ Datasheet | Fairchild Semiconductor

.Data Sheet.co.kr FDMB2307NZ Dual mon Drain N-Channel Power Trench® MOSFET Dual mon Drain N-Channel Power Trench® MOSFET 20 V, 9.7 A, 16.5 mΩ Features - Max r S1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A - Max r S1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A - Max r S1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A - Max r S1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A - Low Profile - 0.8 mm maximum - in the new package Micro FET 2x3 mm - HBM ESD protection level > 2 k V (Note 3) - Ro HS pliant October 2011 General Description This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It Features two mon drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced Power Trench® process with state of the art Micro FET Leadframe, the FDMB2307NZ minimizes both PCB space and r S1S2(on). Application - Li-Ion Battery Pack Pin 1 Pin 1 S1 S1 G1 G2 D1/D2 S2 S2 4 5 G1 2 1 S1 S1 S2...