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FDMC15N06 - N-Channel MOSFET

General Description

These N-Channel power MOSFETs are manufactured using the innovative UItraFET process.

Key Features

  • RDS(on) = 0.075Ω ( Typ. )@ VGS = 10V, ID = 15A.
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC15N06 N-Channel MOSFET July 2009 FDMC15N06 N-Channel MOSFET 55V, 15A, 0.090Ω Features • RDS(on) = 0.075Ω ( Typ.)@ VGS = 10V, ID = 15A • 100% Avalanche Tested • RoHS Compliant Description These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.