FDMC2674 Description
Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A Typ Qg = 12.7nC at VGS = 10V Low Miller charge Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) RoHS pliant tm UltraFET® device bines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are...
FDMC2674 Key Features
- Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A
- Typ Qg = 12.7nC at VGS = 10V
- Low Miller charge
- Low Qrr Body Diode
- Optimized efficiency at high frequencies
- UIS Capability ( Single Pulse and Repetitive Pulse)
- RoHS pliant