FDMC7208S
Features
Q1: N-Channel
- Max r DS(on) = 9.0 mΩ at VGS = 10 V, ID = 12 A
- Max r DS(on) = 11.0 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
- Max r DS(on) = 6.4 mΩ at VGS = 10 V, ID = 16 A
- Max r DS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.5 A
- Termination is Lead-free and Ro HS pliant
Dual N-Channel Power Trench® MOSFET
General Description
This device inclu des two 30V N-Ch annel MOSFETs in a dual Power 33 ( 3 mm X 3 mm MLP) package. Th e package is enhanced for exceptional thermal performance.
Applications
- puting
- munications
- General Purpose Point of Load
- Notebook System
Pin 1
G1 S1 S1 S1 D1 D2
G2 S2 S2 S2 Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range...
