FDMC7570S Overview
The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMC7570S Key Features
- Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A
- Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A
- Advanced Package and bination for low rDS(on) and high efficiency
- SyncFET Schottky Body Diode
- 100% UIL Tested
- RoHS pliant
