The FDMC7570S has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
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FDMC7570S N-Channel Power Trench® SyncFETTM www.DataSheet4U.com December 2009 FDMC7570S N-Channel Power Trench® SyncFETTM 25 V, 40 A, 2 mΩ Features General Description Th...
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wer Trench® SyncFETTM 25 V, 40 A, 2 mΩ Features General Description The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.
FDMC7570S Datasheet
