FDMC7696
Features
General Description
- Max r DS(on) = 11.5 mΩ at VGS = 10 V, ID = 12 A
- Max r DS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
- High performance technology for extremely low r DS(on)
- Termination is Lead-free and Ro HS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Applications
- DC/DC Buck Converters
- Notebook battery power management
- Load Switch in Notebook
Top 8765
Bottom DD D D
D5
4G
D6
3S
D7
2S
1 234
GS S S
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VDSt VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Drain to...
