Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s
Full PDF Text Transcription for FDMC7696 (Reference)
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FDMC7696 N-Channel PowerTrench® MOSFET FDMC7696 N-Channel PowerTrench® MOSFET 30 V, 12 A, 11.5 mΩ January 2015 Features General Description Max rDS(on) = 11.5 mΩ at VGS...
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nuary 2015 Features General Description Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDMC7696 Datasheet
