Datasheet Details
| Part number | FDMC8030 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 370.88 KB |
| Description | Dual N-Channel Power MOSFET |
| Datasheet | FDMC8030_FairchildSemiconductor.pdf |
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Overview: FDMC8030 Dual N-Channel Power Trench® MOSFET August 2011 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10.
| Part number | FDMC8030 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 370.88 KB |
| Description | Dual N-Channel Power MOSFET |
| Datasheet | FDMC8030_FairchildSemiconductor.pdf |
|
|
|
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package.
The package is enhanced for exceptional thermal performance.
Applications Battery Protection Load Switching Point of Load Pin 1 G1 S1 S1 S1 G2 D1 D2 S2 S2 Bottom Drain2 Contact 8 7 6 5 Q2 1 G1 2 S1 3 S1 4 S1 Q1 G2 S2 S2 S2 Power 33 S2 Bottom Drain1 Contact MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 3) (Note 1a) (Note 1b) TA = 25 °C (Note 4) (Note 1a) Ratings 40 ±12 12 50 21 1.9 0.8 -55 to +150 Units V V A mJ W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 155 °C/W Package Marking and Ordering Information Device Marking FDMC8030 Device FDMC8030 Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation FDMC8030 Rev.C 1 .fairchildsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| FDMC8030 | Dual N-Channel MOSFET | ON Semiconductor |
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