FDMC86259P Overview
at VGS = -10 V, ID = -3 A Max rDS(on) = 137 m: at VGS = -6 V, ID = -2.7 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This product is optimised for fast switching...
FDMC86259P Key Features
- Max rDS(on) = 107 m: at VGS = -10 V, ID = -3 A
- Max rDS(on) = 137 m: at VGS = -6 V, ID = -2.7 A
- Very low RDS-on mid voltage P channel silicon technology optimised for low Qg
- This product is optimised for fast switching
