Datasheet Details
| Part number | FDMC86259P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 199.39 KB |
| Description | MOSFET |
| Datasheet |
 FDMC86259P Datasheet
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| Part number | FDMC86259P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 199.39 KB |
| Description | MOSFET |
| Datasheet |
FDMC86259P Datasheet
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|
|
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Max rDS(on) = 107 m: at VGS = -10 V, ID = -3 A Max rDS(on) = 137 m: at VGS = -6 V, ID = -2.7 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
This product is optimised for fast switching applications as well as load switch applications 100% UIL Tested RoHS Compliant Applications Active Clamp Switch Load Switch Pin 1 Pin 1 SS S G D D DD Top Bottom Power 33 S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continu
FDMC86259P P-Channel PowerTrench® MOSFET February 2014 FDMC86259P P-Channel PowerTrench® MOSFET -150 V, -13 A, 107.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC86259P | P-Channel MOSFET | ON Semiconductor |
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