FDMC86259P Key Features
- Max rDS(on) = 107 m: at VGS = -10 V, ID = -3 A
- Max rDS(on) = 137 m: at VGS = -6 V, ID = -2.7 A
- Very low RDS-on mid voltage P channel silicon technology optimised for low Qg
- This product is optimised for fast switching
| Manufacturer | Part Number | Description |
|---|---|---|
| FDMC86259P | P-Channel MOSFET |