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FDMC86320 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

„ Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A „ Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A „ MSL1 robust package design „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Applications „ Primary DC-DC Switch „ Motor Bridge Switch „ Synchronous Rectifier Top Bottom Pin 1 S SG S MLP 3.3x3.3 DD DD S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Parameter TC = 25 °C TA

Overview

FDMC86320 N-Channel Power Trench® MOSFET FDMC86320 N-Channel Power Trench® MOSFET 80 V, 22 A, 11.

Key Features

  • General.