Datasheet Summary
FDMC86320 N-Channel Power Trench® MOSFET
N-Channel Power Trench® MOSFET
80 V, 22 A, 11.7 mΩ
June 2014
Features
General Description
- Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A
- Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A
- MSL1 robust package design
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
- Primary DC-DC Switch
- Motor Bridge...
