Datasheet Summary
FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET
January 2015
N-Channel Shielded Gate Power Trench® MOSFET
80 V, 68 A, 6.5 mΩ
Features
General Description
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A
- Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
- DC-DC...
