Datasheet Details
| Part number | FDMC86340ET80 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 199.69 KB |
| Description | MOSFET |
| Download | FDMC86340ET80 Download (PDF) |
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| Part number | FDMC86340ET80 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 199.69 KB |
| Description | MOSFET |
| Download | FDMC86340ET80 Download (PDF) |
|
|
|
Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A High performance technology for extremely low rDS(on) Termination is Lead-free This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application DC-DC Conversion RoHS Compliant Pin 1 Pin 1 SS SG S S D D D DDD Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuou
FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 68 A, 6.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC86340ET80 | N-Channel MOSFET | ON Semiconductor |
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