FDMC86570LET60 Overview
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Key Features
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
- RoHS Compliant
