FDMC86570LET60 Datasheet | Fairchild Semiconductor

FDMC86570LET60 N-Channel Shielded Gate Power Trench® MOSFET January 2015 N-Channel Shielded Gate Power Trench® MOSFET 60 V, 87 A, 4.3 mΩ Features - Extended TJ rating to 175°C - Shielded Gate MOSFET Technology - Max r DS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A - Max r DS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A - High performance technology for extremely low r DS(on) - Termination is Lead-free - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application - DC-DC Conversion - Pin 1 Pin 1 SS SG D DD D SD GD Top PPoowweerr 3333 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous...