FDMC86570LET60 Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application DC-DC Conversion Pin 1 Pin 1 SS SG S S D D D DD D SD GD Top PPoowweerr 3333 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS...
FDMC86570LET60 Key Features
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
- RoHS pliant
- DC-DC Conversion
- Continuous
